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(R)
BYT230Y-400
FAST RECOVERY RECTIFIER DIODES
PRELIMINARY DATASHHET
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING 2 x 30 A 400 V 150C 1.3 V
A1 K A2
A2 K A1
Max247 DESCRIPTION Dual 400V rectifiers suited for Switch Mode Power Supplies and other converters. Packaged in Max247, this device is also intended for use in welding equipment and telecom power supplies.
ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IFRM IF(RMS) IF(AV) Parameter Repetitive peak reverse voltage Repetitive peak forward current RMS forward current Average forward current Tc = 105C = 0.5 Per diode Per device tp=5 s F=5kHz Value 400 380 50 30 60 300 - 55 to + 150 150 A C C Unit V A A A
IFSM Tstg Tj
Surge non repetitive forward current Storage temperature range Maximum operating junction temperature
tp = 10 ms Sinusoidal
October 1999 - Ed: 3A
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BYT230Y-400
THERMAL RESISTANCES Symbol Rth (j-c) Rth(c) Parameter Junction to case Per diode Total Coupling Value 0.95 0.55 0.15 Unit C/W C/W
When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2%
Min.
Typ. 3
VR = VRRM IF = 30 A IF = 30 A IF = 60 A IF = 60 A 1.1 0.9
Max. 35 12 1.5 1.3 1.7 1.6
Unit A mA V
To evaluate the conduction losses use the following equation: P = 1.0 x IF(AV) + 0.01 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25C IF = 0.5A IR = 1A Irr = 0.25A IF = 1A VR = 30V dIF/dt = - 15A/s Min. Typ. Max. 50 100 Unit ns
TURN-OFF SWITCHING CHARACTERISTICS (without serie inductance) Symbol tIRM IRM Test Conditions dIF/dt = - 120A/s dIF/dt = - 240A/s dIF/dt = - 120A/s dIF/dt = - 240A/s VCC = 200 V IF = 30A Lp = 0.05H Tj = 100C Min. Typ. 50 9 12 A Max. 75 Unit ns
TURN-OFF OVERVOLTAGE CORFFICIENT (with serie inductance) Symbol C= VRP VCC Test Conditions Tj = 100C VCC = 60V IF = IF (AV) dIF/dt = - 30A/s Lp = 1H Min. Typ. 3.3 Max. Unit /
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BYT230Y-400
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) 60
= 0.1 = 0.2 = 0.5 =1
Fig. 2: Peak current versus form factor (per diode).
IM(A)
P=40W
250 200
T
50 40 30 20 10
= 0.05
=tp/T
tp
150
P=60W
100 50 0 0.0
P=20W
P=80W
T
IF(av) (A) 0 0 5 10 15 20 25 30
=tp/T
tp
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
35
40
Fig. 3: Average forward current versus ambient temperature(=0.5, perdiode).
IF(av)(A)
Fig. 4: Non repetitive surge peak forward current versus overloadduration( per diode).
IM(A)
35 30 25 20 15 10 5 0
250
Rth(j-a)=Rth(j-c)
200 150
Rth(j-a)=5C/W Tc=50C
100
Tc=75C
T
50
=tp/T
tp
IM t
Tc=110C
=0.5
Tamb(C) 50 75 100 125 150
0
25
0 1E-3
t(s) 1E-2 1E-1 1E+0
Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (per diode).
K=[Zth(j-c)/Rth(j-c)] 1.0
= 0.5
Fig. 6: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A)
200.0 100.0
Typical values Tj=125C
= 0.2 = 0.1
10.0
Tj=25C
Tj=125C
T
Single pulse
1.0
tp
tp(s) 0.1 1E-3 1E-2 1E-1
=tp/T
1E+0
0.1 0.0
VFM(V) 0.5 1.0 1.5 2.0 2.5
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BYT230Y-400
Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(pF)
F=1MHz Tj=25C
Fig. 8: Recoverycharges versus dIF/dt (per diode).
100
1000
Qrr(nC)
IF=IF(av) 90% confidence Tj=100C
50
100
20 VR(V) 10 1 10 100 200
dIF/dt(A/s) 10 10 20 50 100 200 500
Fig. 9: Recovery current versus dIF/dt (per diode).
Fig. 10: Transient peak forward versus dIF/dt (per diode).
VFP(V)
IF=IF(av) 90% confidence Tj=100C
IRM(A) 50
IF=IF(av) 90% confidence Tj=100C
30 25 20
10 15 10 5 dIF/dt(A/s) 1 10 20 50 100 200 500 0 dIF/dt(A/s) 0 100 200 300 400 500
Fig. 11: Forward recovery time versus dIF/dt (per diode).
tfr(s) 1.50 1.25 1.00 0.75
IF=IF(av) 90% confidence Tj=100C
Fig. 12: Dynamic parameters versus junction temperature.
Qrr;IRM[Tj] / Qrr;IRM[Tj=100C]
1.50 1.25 1.00 0.75
IRM
0.50 0.25
dIF/dt(A/s)
0.50 0.25
Qrr
0.00
Tj(C) 0 25 50 75 100 125 150
0
100
200
300
400
500
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BYT230Y-400
PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. Millimeters Min.
E A
Inches Min. 0.185 0.087 0.038 0.079 0.118 0.016 0.776 0.211 0.602 0.559 0.146 Max. 0.209 0.102 0.055 0.094 0.133 0.031 0.799 0.219 0.626 0.598 0.169
Max. 5.30 2.60 1.40 2.40 3.40 0.80 10.30 5.55 15.90 15.20 4.30
A A1 b
D
4.70 2.20 1.00 2.00 3.00 0.40 19.70 5.35 15.30 14.20 3.70
b1 b2 c
L1 A1
D e
b1 b2 e b c
L
E L L1
Ordering type BYT230Y-400
Marking BYT230Y-400
Package Max247
Weight 5 g.
Base qty 30
Delivery mode Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5

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